IRFD9210PBF Mosfets_Inventory of electronic components_Electronic equipment_Power management

IRFD9210PBF


：	IRFD9210PBF
：	金属氧化物半导体场效应晶体管
：	Vishay
：	Single P-Channe
：	-
：	Tube
：	-

TYPE	DESCRIPTION
Fet Type:	P-Ch
Drain-to-Source Voltage [Vdss]:	200V
Drain-Source On Resistance-Max:	3Ω
Rated Power Dissipation:	1\|W
Qg Gate Charge:	8.9nC
Package Style:	DIP-4
Mounting Method:	Through Hole

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