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IXTN170P10P

  • IXTN170P10P
  • IXTN170P10P
  • IXTN170P10P
  • IXTN170P10P
IXTN170P10P
Mosfets
IXYS
P-Channel 100 V
-
Tube
-
TYPEDESCRIPTION
Fet Type:P-Ch
Drain-to-Source Voltage [Vdss]:100V
Drain-Source On Resistance-Max:12mΩ
Rated Power Dissipation:890|W
Qg Gate Charge:240nC
Package Style: SOT-227
Mounting Method:Chassis Mount
PDF(1)

10

526.3351

5263.351

20

460.6245

9212.49

40

446.6818

17867.272

50

442.2234

22111.17

150

421.0966

63164.49

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