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SIDR622DP-T1-GE3

  • SIDR622DP-T1-GE3
  • SIDR622DP-T1-GE3
SIDR622DP-T1-GE3
金属氧化物半导体场效应晶体管
Vishay
Single N-Channe
-
Reel
-
TYPEDESCRIPTION
Fet Type:N-Ch
No of Channels:1
Drain-to-Source Voltage [Vdss]:150V
Drain-Source On Resistance-Max:17.7mΩ
Rated Power Dissipation:6.25W
Qg Gate Charge:27nC
Gate-Source Voltage-Max [Vgss]:20V
Drain Current:64.6A
Turn-on Delay Time:13ns
Turn-off Delay Time:18ns
Rise Time:6ns
Fall Time:6ns
Operating Temp Range:-55°C to +150°C
Gate Source Threshold:4.5V
Input Capacitance:1516pF
Mounting Method:Surface Mount
PDF(1)

3000

37.2378

111713.4

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