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STP40N65M2

  • STP40N65M2
  • STP40N65M2
STP40N65M2
Mosfets
STMicroelectronics
N-Channel 650 V
-
Tube
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TYPEDESCRIPTION
Fet Type:N-Ch
No of Channels:1
Drain-to-Source Voltage [Vdss]:650V
Drain-Source On Resistance-Max:99mΩ
Rated Power Dissipation:250W
Qg Gate Charge:56.5nC
Gate-Source Voltage-Max [Vgss]:25V
Drain Current:32A
Turn-on Delay Time:15ns
Turn-off Delay Time:96.5ns
Rise Time:10ns
Fall Time:12ns
Gate Source Threshold:3V
Technology:MDmesh
Input Capacitance:2355pF
Package Style: TO-220-3 (TO-220AB)
Mounting Method:Through Hole
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