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NJVMJD112T4G

  • NJVMJD112T4G
  • NJVMJD112T4G
  • NJVMJD112T4G
  • NJVMJD112T4G
  • NJVMJD112T4G
  • NJVMJD112T4G
： NJVMJD112T4G
： Bipolar (BJT) Transistors
： onsemi
： NJVMJD Series N
： -
： Reel
： -
TYPEDESCRIPTION
Type:Darlington
Polarity:NPN
CE Voltage-Max:100V
Collector Current Max:2A
Power Dissipation-Tot:20W
Collector - Base Voltage:100V
Collector - Emitter Saturation Voltage:2V
Emitter - Base Voltage:5V
DC Current Gain-Min:1000
Configuration:Single
Frequency - Transition:25MHz
Collector - Current Cutoff:20µA
Operating Temp Range:-65°C to +150°C
Package Style: TO-252-3 (DPAK)
Mounting Method:Surface Mount
PDF(1)

2500

5.2245

13061.25

5000

5.017

25085

7500

4.7237

35427.75

10000

4.5163

45163

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