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| TYPE | DESCRIPTION |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 60V |
| Drain-Source On Resistance-Max: | 10mΩ |
| Rated Power Dissipation: | 2.5W |
| Qg Gate Charge: | 45nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 12A |
| Turn-on Delay Time: | 8ns |
| Turn-off Delay Time: | 19ns |
| Rise Time: | 58ns |
| Fall Time: | 8ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 2.2V |
| Technology: | Si |
| Height - Max: | 1.1mm |
| Length: | 5.49mm |
| Input Capacitance: | 2600pF |
| Mounting Method: | Surface Mount |
5000
10.9596
54798
