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| TYPE | DESCRIPTION |
| Fet Type: | P-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | -20V |
| Drain-Source On Resistance-Max: | 70mΩ |
| Rated Power Dissipation: | 2.5W |
| Qg Gate Charge: | 14.4nC |
| Gate-Source Voltage-Max [Vgss]: | 12V |
| Drain Current: | -6.5A |
| Turn-on Delay Time: | 13.7ns |
| Turn-off Delay Time: | 79.1ns |
| Rise Time: | 14ns |
| Fall Time: | 35.5ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | -1.2V |
| Technology: | Si |
| Height - Max: | 1.75mm |
| Length: | 4.95mm |
| Input Capacitance: | 820pF |
| Package Style: | SOIC-8 |
| Mounting Method: | Surface Mount |
2500
3.864
9660
5000
3.6565
18282.5
7500
3.5049
26286.75
10000
3.2974
32974
12500
3.1558
39447.5
