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IPB036N12N3GATMA1


：	IPB036N12N3GATMA1
：	Mosfets
：	Infineon
：	Single N-Channe
：	-
：	Reel
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	120V
Drain-Source On Resistance-Max:	3.6mΩ
Rated Power Dissipation:	300\|W
Qg Gate Charge:	158nC
Package Style:	TO-263-7 (D2PAK7)
Mounting Method:	Surface Mount

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