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| TYPE | DESCRIPTION |
| Manufacturer: | Infineon |
| Product Category: | Discrete Semiconductor Modules |
| Product: | Power MOSFET Modules |
| Type: | SiC Power Module |
| Vf - Forward Voltage: | 4.6 V |
| Vgs - Gate-Source Voltage: | - 10 V, + 20 V |
| Mounting Style: | Press Fit |
| Package / Case: | Module |
| Minimum Operating Temperature: | - 40 C |
| Maximum Operating Temperature: | + 150 C |
| Packaging: | Tray |
| Brand: | Infineon Technologies |
| Configuration: | 3-Phase |
| Fall Time: | 18.5 ns |
| Id - Continuous Drain Current: | 100 A |
| Operating Supply Voltage: | - |
| Pd - Power Dissipation: | 20 mW (1/50 W) |
| Product Type: | Discrete Semiconductor Modules |
| Rds On - Drain-Source Resistance: | 11.3 mOhms |
| Rise Time: | 23.4 ns |
| Factory Pack Quantity: Factory Pack Quantity: | 15 |
| Subcategory: | Discrete Semiconductor Modules |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Typical Turn-Off Delay Time: | 82.9 ns |
| Typical Turn-On Delay Time: | 26.7 ns |
| Vds - Drain-Source Breakdown Voltage: | 1200 V |
| Vgs th - Gate-Source Threshold Voltage: | 5.55 V |
| Part # Aliases: | F3L11MR12W2M1_B74 SP005408206 |
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