TYPE | DESCRIPTION |
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 650V |
Drain-Source On Resistance-Max: | 50mΩ |
Rated Power Dissipation: | 278W |
Qg Gate Charge: | 68nC |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 47A |
Turn-on Delay Time: | 22ns |
Turn-off Delay Time: | 72ns |
Rise Time: | 6ns |
Fall Time: | 3ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | 3V |
Technology: | CoolMOS |
Height - Max: | 2.35mm |
Length: | 15.6mm |
Input Capacitance: | 2670pF |
Package Style: | HDSOP-10 |
Mounting Method: | Surface Mount |
1700
119.6195
203353.15