IXTH30N50L2 Mosfets_Inventory of electronic components_Electronic equipment_Power management

IXTH30N50L2


：	IXTH30N50L2
：	Mosfets
：	IXYS
：	Single N Channe
：	-
：	Tube
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	500V
Drain-Source On Resistance-Max:	215mΩ
Rated Power Dissipation:	400\|W
Qg Gate Charge:	240nC
Package Style:	TO-247-3
Mounting Method:	Through Hole

PDF(1)

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