SIHB30N60E-GE3 Mosfets_Inventory of electronic components_Electronic equipment_Power management

SIHB30N60E-GE3


：	SIHB30N60E-GE3
：	Mosfets
：	Vishay
：	E-Series N-Chan
：	-
：	Tube
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	600V
Drain-Source On Resistance-Max:	125mΩ
Rated Power Dissipation:	250\|W
Qg Gate Charge:	85nC
Package Style:	TO-263-3 (D2PAK)
Mounting Method:	Surface Mount

PDF(1)

60.5229

3026.145

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7763.7

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12724.175

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49.1642

36873.15

1250

48.4447

60555.875

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