STH315N10F7-6 Mosfets_Inventory of electronic components_Electronic equipment_Power management

STH315N10F7-6


：	STH315N10F7-6
：	Mosfets
：	STMicroelectronics
：	STH315N10F7 Ser
：	-
：	Reel
：	-

TYPE	DESCRIPTION
Fet Type:	N-Ch
Drain-to-Source Voltage [Vdss]:	100V
Drain-Source On Resistance-Max:	2.3mΩ
Rated Power Dissipation:	315\|W
Qg Gate Charge:	180nC
Mounting Method:	Surface Mount

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