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STQ1NK60ZR-AP

  • STQ1NK60ZR-AP
  • STQ1NK60ZR-AP
  • STQ1NK60ZR-AP
  • STQ1NK60ZR-AP
STQ1NK60ZR-AP
Mosfets
STMicroelectronics
N-Channel 600 V
-
Ammo Pack
-
TYPEDESCRIPTION
Fet Type:N-Ch
No of Channels:1
Drain-to-Source Voltage [Vdss]:600V
Drain-Source On Resistance-Max:15Ω
Rated Power Dissipation:3|W
Qg Gate Charge:4.9nC
Gate-Source Voltage-Max [Vgss]:30V
Drain Current:0.3A
Turn-on Delay Time:5.5ns
Turn-off Delay Time:13ns
Rise Time:5ns
Fall Time:28ns
Operating Temp Range:-55°C to +150°C
Gate Source Threshold:3.75V
Height - Max:4.8mm
Length:4.8mm
Input Capacitance:94pF
Package Style: TO-92
Mounting Method:Through Hole
PDF(1)

2000

3.7224

7444.8

4000

3.5049

14019.6

6000

3.3632

20179.2

10000

3.1558

31558

20000

3.0041

60082

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