TYPE | DESCRIPTION |
Manufacturer: | Qorvo |
Product Category: | RF JFET Transistors |
RoHS: | Details |
Transistor Type: | HEMT |
Technology: | GaN-on-SiC |
Operating Frequency: | DC to 1.7 GHz |
Gain: | 23.9 dB |
Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 145 V |
Vgs - Gate-Source Breakdown Voltage: | - 7 V to 1.5 V |
Id - Continuous Drain Current: | 70 A |
Output Power: | 680 W |
Maximum Drain Gate Voltage: | 55 V |
Minimum Operating Temperature: | - 40 C |
Maximum Operating Temperature: | + 85 C |
Pd - Power Dissipation: | 714 W |
Mounting Style: | SMD/SMT |
Package / Case: | NI780-2 |
Brand: | Qorvo |
Configuration: | Single |
Development Kit: | QPD1016EVB01 |
Moisture Sensitive: | Yes |
Product Type: | RF JFET Transistors |
Series: | QPD1016 |
Factory Pack Quantity: Factory Pack Quantity: | 25 |
Subcategory: | Transistors |
1
2022.98
2022.98
25
market price
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