取消
| TYPE | DESCRIPTION |
| Manufacturer: | Qorvo |
| Product Category: | RF JFET Transistors |
| RoHS: | Details |
| Transistor Type: | HEMT |
| Technology: | GaN-on-SiC |
| Operating Frequency: | DC to 12 GHz |
| Gain: | 24 dB |
| Transistor Polarity: | N-Channel |
| Vds - Drain-Source Breakdown Voltage: | 32 V |
| Vgs - Gate-Source Breakdown Voltage: | - 2.8 V |
| Id - Continuous Drain Current: | 610 mA |
| Output Power: | 10 W |
| Minimum Operating Temperature: | - 40 C |
| Maximum Operating Temperature: | + 85 C |
| Pd - Power Dissipation: | 13.8 W |
| Mounting Style: | SMD/SMT |
| Package / Case: | QFN-16 |
| Packaging: | Reel |
| Packaging: | Cut Tape |
| Packaging: | MouseReel |
| Brand: | Qorvo |
| Development Kit: | QPD1022EVB01 |
| Moisture Sensitive: | Yes |
| Product Type: | RF JFET Transistors |
| Series: | QPD1022 |
| Factory Pack Quantity: Factory Pack Quantity: | 100 |
| Subcategory: | Transistors |
| Part # Aliases: | QPD1022 |
1
97.88
97.88
25
70.24
1756
100
55.3
5530
